SIR466DP-T1-GE3

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Mfr.Part #
SIR466DP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 30V 40A PPAK SO-8
Stock
27,666
In Stock :
27,666

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
30 ns
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
2730pF @ 15V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
45 mJ
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Height :
1.04mm
Peak Reflow Temperature (Cel) :
260
Length :
4.9mm
Number of Pins :
8
Rds On (Max) @ Id, Vgs :
3.5m Ω @ 15A, 10V
Series :
TrenchFET®
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Terminal Finish :
MATTE TIN
Terminal Form :
C BEND
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
5W
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
2.4V @ 250μA
Case Connection :
DRAIN
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Resistance :
3.5mOhm
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
5
Number of Channels :
1
Vgs (Max) :
±20V
Terminal Position :
Dual
Threshold Voltage :
2.4V
Rise Time :
9ns
Width :
5.89mm
Continuous Drain Current (ID) :
40A
Mount :
Surface Mount
REACH SVHC :
Unknown
Number of Elements :
1
Pin Count :
8
Package / Case :
PowerPAK® SO-8
Turn-Off Delay Time :
35 ns
Published :
2013
FET Type :
N-Channel
Factory Lead Time :
14 Weeks
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
5W Ta 54W Tc
Drain to Source Breakdown Voltage :
30V
Fall Time (Typ) :
9 ns
Pulsed Drain Current-Max (IDM) :
70A
JESD-30 Code :
R-XDSO-C5
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Weight :
506.605978mg
Element Configuration :
Single
Datasheets
SIR466DP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIR466DP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Number of Channels:1, Package / Case:PowerPAK® SO-8, SIR466DP-T1-GE3 pinout, SIR466DP-T1-GE3 datasheet PDF, SIR466DP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIR466DP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIR466DP-T1-GE3


N-Channel Tape & Reel (TR) 3.5m Ω @ 15A, 10V ±20V 2730pF @ 15V 65nC @ 10V PowerPAK® SO-8

SIR466DP-T1-GE3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2730pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.Peak drain current is 70A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.4V, which means that it will not activate any of its functions when its threshold voltage reaches 2.4V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SIR466DP-T1-GE3 Features


the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 70A.
a threshold voltage of 2.4V


SIR466DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIR466DP-T1-GE3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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