SIR462DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

5

Turn On Delay Time :

20 ns

Published :

2009

Resistance :

7.9mOhm

Terminal Position :

Dual

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

3 V

Rise Time :

15ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Mounting Type :

Surface Mount

FET Type :

N-Channel

Length :

4.9mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Threshold Voltage :

3V

Width :

5.89mm

Number of Channels :

1

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Case Connection :

DRAIN

Terminal Form :

C BEND

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Height :

1.04mm

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

30A

Vgs (Max) :

±20V

Turn-Off Delay Time :

25 ns

ECCN Code :

EAR99

Number of Elements :

1

REACH SVHC :

Unknown

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-XDSO-C5

Input Capacitance (Ciss) (Max) @ Vds :

1155pF @ 15V

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 20A, 10V

Pin Count :

8

Weight :

506.605978mg

Power Dissipation-Max :

4.8W Ta 41.7W Tc

Radiation Hardening :

No

Pbfree Code :

yes

Power Dissipation :

4.8W

JESD-609 Code :

e3

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Package / Case :

PowerPAK® SO-8

Pulsed Drain Current-Max (IDM) :

70A

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V