SIR460DP-T1-GE3
- Mfr.Part #
- SIR460DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 40A PPAK SO-8
- Stock
- 60,687
- In Stock :
- 60,687
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2071pF @ 15V
- Drain Current-Max (Abs) (ID) :
- 24.3A
- Height :
- 1.04mm
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5.89mm
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 16ns
- Terminal Form :
- C BEND
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Vgs(th) (Max) @ Id :
- 2.4V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Pulsed Drain Current-Max (IDM) :
- 70A
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 15A, 10V
- Power Dissipation :
- 5W
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 45 mJ
- JESD-609 Code :
- e3
- Published :
- 2011
- Power Dissipation-Max :
- 5W Ta 48W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 1 V
- Threshold Voltage :
- 1V
- Drain-source On Resistance-Max :
- 0.0047Ohm
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 12 ns
- Element Configuration :
- Single
- Series :
- TrenchFET®
- Package / Case :
- PowerPAK® SO-8
- Turn On Delay Time :
- 25 ns
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Length :
- 4.9mm
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 14 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Number of Channels :
- 1
- JESD-30 Code :
- R-XDSO-C5
- Turn-Off Delay Time :
- 28 ns
- Weight :
- 506.605978mg
- Pin Count :
- 8
- Continuous Drain Current (ID) :
- 40A
- Number of Elements :
- 1
- REACH SVHC :
- Unknown
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 5
- Datasheets
- SIR460DP-T1-GE3
N-Channel Tape & Reel (TR) 4.7m Ω @ 15A, 10V ±20V 2071pF @ 15V 54nC @ 10V PowerPAK® SO-8
SIR460DP-T1-GE3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 45 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2071pF @ 15V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 24.3A.When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 70A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SIR460DP-T1-GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 70A.
a threshold voltage of 1V
SIR460DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR460DP-T1-GE3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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