SIR438DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

25V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Weight :

506.605978mg

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Length :

4.9mm

Rise Time :

21ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Width :

5.89mm

Power Dissipation-Max :

5.4W Ta 83W Tc

Element Configuration :

Single

REACH SVHC :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Terminal Form :

C BEND

Nominal Vgs :

1 V

Number of Pins :

8

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-XDSO-C5

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Published :

2013

Package / Case :

PowerPAK® SO-8

Turn-Off Delay Time :

41 ns

Drain-source On Resistance-Max :

0.0023Ohm

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Continuous Drain Current (ID) :

60A

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Height :

1.04mm

Lead Free :

Lead Free

Pbfree Code :

yes

Fall Time (Typ) :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

4560pF @ 10V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

40A

Case Connection :

DRAIN

Power Dissipation :

5.4W

Transistor Element Material :

SILICON

Radiation Hardening :

No

Terminal Position :

Dual

Turn On Delay Time :

37 ns

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 20A, 10V

Number of Terminations :

5

ECCN Code :

EAR99