SIHB8N50D-GE3
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- Mfr.Part #
- SIHB8N50D-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8.7A TO263
- Stock
- 41,105
- In Stock ：
- 41,105
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.85Ohm
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 4A, 10V
- Pulsed Drain Current-Max (IDM) :
- 18A
- Fall Time (Typ) :
- 11 ns
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 156W Tc
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 16ns
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 527pF @ 100V
- Current - Continuous Drain (Id) @ 25°C :
- 8.7A Tc
- JESD-30 Code :
- R-PSSO-G2
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time :
- 17 ns
- Continuous Drain Current (ID) :
- 8.7A
- DS Breakdown Voltage-Min :
- 500V
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 500V
- Published :
- 2016
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 29 mJ
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 13 ns
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 8 Weeks
- FET Type :
- N-Channel
- Datasheets
- SIHB8N50D-GE3
N-Channel Tube 850m Ω @ 4A, 10V ±30V 527pF @ 100V 30nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHB8N50D-GE3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 29 mJ.A device's maximum input capacitance is 527pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 17 ns.Its maximum pulsed drain current is 18A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
SIHB8N50D-GE3 Features
the avalanche energy rating (Eas) is 29 mJ
a continuous drain current (ID) of 8.7A
the turn-off delay time is 17 ns
based on its rated peak drain current 18A.
a 500V drain to source voltage (Vdss)
SIHB8N50D-GE3 Applications
There are a lot of Vishay Siliconix
SIHB8N50D-GE3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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