SIHB068N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package Type :

D2PAK (TO-263)

RoHS :

Details

Subcategory :

MOSFETs

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Elements per Chip :

1

Mounting Style :

SMD/SMT

Product Type :

MOSFET

Mounting Type :

Surface Mount

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

77 nC @ 10 V

Series :

EF

Number of Channels :

1 Channel

Qualification :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

250W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Base Product Number :

SIHB068

Channel Type :

N

Current - Continuous Drain (Id) @ 25°C :

41A (Tc)

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±30V

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

600 V

Pin Count :

3

Transistor Polarity :

N-Channel

MSL :

MSL 1 - Unlimited

Power Dissipation (Max) :

250W (Tc)

Package :

Tube

Supplier Device Package :

D2PAK (TO-263)

Brand :

Vishay Semiconductors

FET Feature :

-

Rds On (Max) @ Id, Vgs :

68mOhm @ 16A, 10V

Channel Mode :

Enhancement

Continuous Drain Current Id :

41A

Input Capacitance (Ciss) (Max) @ Vds :

2628 pF @ 100 V

Manufacturer :

Vishay

FET Type :

N-Channel

Product Status :

Active