SIHB11N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

450mOhm @ 5.5A, 10V

Product Type :

MOSFET

Package Type :

D2PAK (TO-263)

Channel Type :

N

Subcategory :

MOSFETs

Product Category :

MOSFET

FET Type :

N-Channel

Supplier Device Package :

D2PAK (TO-263)

Pin Count :

3

Power Dissipation :

78W

Power Dissipation (Max) :

78W (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Transistor Polarity :

N-Channel

Brand :

Vishay / Siliconix

Series :

E

Rise Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

804 pF @ 100 V

Gate Charge (Qg) (Max) @ Vgs :

42 nC @ 10 V

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current Id :

8A

FET Feature :

-

Maximum Operating Temperature :

+ 150 C

Number of Elements per Chip :

1

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

Package :

Tube

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Product Status :

Active

Manufacturer :

Vishay

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

800 V

Base Product Number :

SIHB11

Qualification :

-

RoHS :

Details