SIHB120N60E-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package Type :

D2PAK (TO-263)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

120mOhm @ 12A, 10V

FET Feature :

-

Power Dissipation (Max) :

179W (Tc)

Manufacturer :

Vishay

Mounting Type :

Surface Mount

Qualification :

-

Gate Charge (Qg) (Max) @ Vgs :

45 nC @ 10 V

Channel Type :

N

Power Dissipation :

179W

Number of Elements per Chip :

2

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1562 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C :

25A (Tc)

FET Type :

N-Channel

Brand :

Vishay / Siliconix

Pin Count :

3

Series :

E

Subcategory :

MOSFETs

Product Status :

Active

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package :

Digi-Reel?

RoHS :

Details

Channel Mode :

Enhancement

Continuous Drain Current Id :

25A

Product Type :

MOSFET

Supplier Device Package :

D2PAK (TO-263)

Packaging :

Reel

Product Category :

MOSFET

Vgs (Max) :

±30V

Operating Temperature :

-55°C ~ 150°C (TJ)