SIHB100N60E-GE3
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- Mfr.Part #
- SIHB100N60E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A D2PAK
- Stock
- 168
- In Stock ：
- 168
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 13A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1851pF @ 100V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 18 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 600V
- Series :
- E
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package :
- D2PAK (TO-263)
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 208W Tc
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Datasheets
- SIHB100N60E-GE3
N-Channel 100mOhm @ 13A, 10V ±30V 1851pF @ 100V 50nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHB100N60E-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1851pF @ 100V maximal input capacitance.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
SIHB100N60E-GE3 Features
a 600V drain to source voltage (Vdss)
SIHB100N60E-GE3 Applications
There are a lot of Vishay Siliconix
SIHB100N60E-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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