SIHB10N40D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

400V

Terminal Form :

Gull wing

Pbfree Code :

yes

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

10A

DS Breakdown Voltage-Min :

400V

Input Capacitance (Ciss) (Max) @ Vds :

526pF @ 100V

Turn On Delay Time :

12 ns

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rise Time :

18ns

Pulsed Drain Current-Max (IDM) :

23A

Vgs (Max) :

±30V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Number of Terminations :

2

Published :

2016

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain-source On Resistance-Max :

0.6Ohm

Rds On (Max) @ Id, Vgs :

600m Ω @ 5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

147W Tc

Avalanche Energy Rating (Eas) :

194 mJ

Transistor Element Material :

SILICON

Turn-Off Delay Time :

18 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Fall Time (Typ) :

14 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB