SIHB053N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Power Dissipation :

278W

Supplier Device Package :

D2PAK (TO-263)

Product Status :

Active

MSL :

MSL 1 - Unlimited

Gate Charge (Qg) (Max) @ Vgs :

92 nC @ 10 V

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current Id :

47A

Power Dissipation (Max) :

278W (Tc)

Rds On (Max) @ Id, Vgs :

54mOhm @ 26.5A, 10V

Package Type :

D2PAK (TO-263)

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

47A (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Channel Type :

N

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

3722 pF @ 100 V

Pin Count :

3

Series :

E

Qualification :

-

Number of Elements per Chip :

1

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA