SIHB055N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Operating Temperature :

-55°C ~ 150°C (TJ)

Qualification :

-

Vgs(th) (Max) @ Id :

5V @ 250μA

Brand :

Vishay Semiconductors

Continuous Drain Current Id :

46A

Vgs (Max) :

±30V

Product Status :

Active

Supplier Device Package :

D2PAK (TO-263)

Mounting Style :

SMD/SMT

Product Category :

MOSFET

Mounting Type :

Surface Mount

Manufacturer :

Vishay

Series :

EF

Drain to Source Voltage (Vdss) :

600 V

Power Dissipation :

278W

Configuration :

Single

Channel Type :

N

Rise Time :

89 ns

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package Type :

D2PAK (TO-263)

Package :

Tube

Rds On (Max) @ Id, Vgs :

55mOhm @ 26.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3707 pF @ 100 V

Product Type :

MOSFET

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

46A (Tc)

FET Feature :

-

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

278W (Tc)

RoHS :

Details

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

95 nC @ 10 V