SIHB12N50E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Weight :

1.437803g

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

REACH SVHC :

Unknown

Factory Lead Time :

18 Weeks

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Terminal Position :

Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

114W Tc

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

886pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Threshold Voltage :

4V

Number of Elements :

1

FET Type :

N-Channel

Continuous Drain Current (ID) :

10.5A

Drain to Source Breakdown Voltage :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Bulk

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB