SIHB6N65E-GE3

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Mfr.Part #
SIHB6N65E-GE3
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 650V 7A D2PAK
Stock
250
In Stock :
250

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±30V
Published :
2014
Fall Time (Typ) :
20 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
REACH SVHC :
Unknown
Pbfree Code :
yes
JESD-30 Code :
R-PSSO-G2
Input Capacitance (Ciss) (Max) @ Vds :
820pF @ 100V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Turn-Off Delay Time :
30 ns
Avalanche Energy Rating (Eas) :
56 mJ
Radiation Hardening :
No
Factory Lead Time :
14 Weeks
Turn On Delay Time :
14 ns
Drain to Source Breakdown Voltage :
650V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
2
Number of Pins :
3
Power Dissipation :
78W
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Resistance :
600mOhm
Terminal Form :
Gull wing
Threshold Voltage :
2V
Element Configuration :
Single
Rise Time :
12ns
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Power Dissipation-Max :
78W Tc
Continuous Drain Current (ID) :
7A
Rds On (Max) @ Id, Vgs :
600m Ω @ 3A, 10V
Mount :
Surface Mount
Drain Current-Max (Abs) (ID) :
7A
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Datasheets
SIHB6N65E-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHB6N65E-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, SIHB6N65E-GE3 pinout, SIHB6N65E-GE3 datasheet PDF, SIHB6N65E-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHB6N65E-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHB6N65E-GE3


N-Channel Tube 600m Ω @ 3A, 10V ±30V 820pF @ 100V 48nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SIHB6N65E-GE3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 56 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 820pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Drain current refers to the maximum continuous current a device can conduct, and it is 7A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

SIHB6N65E-GE3 Features


the avalanche energy rating (Eas) is 56 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 30 ns
a threshold voltage of 2V


SIHB6N65E-GE3 Applications


There are a lot of Vishay Siliconix
SIHB6N65E-GE3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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