SIHB5N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Qualification :

-

Product Status :

Active

Number of Elements per Chip :

1

Gate Charge (Qg) (Max) @ Vgs :

16.5 nC @ 10 V

Continuous Drain Current Id :

4.4A

Vgs (Max) :

±30V

Power Dissipation (Max) :

62.5W (Tc)

Series :

E

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

4.4A (Tc)

Package Type :

D2PAK (TO-263)

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

D2PAK (TO-263)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

1.35Ohm @ 1.5A, 10V

FET Feature :

-

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

800 V

Power Dissipation :

62.5W

Channel Type :

N

Package :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

321 pF @ 100 V

FET Type :

N-Channel