SIHB33N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

98m Ω @ 16.5A, 10V

Width :

9.65mm

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3454pF @ 100V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.67mm

Power Dissipation-Max :

278W Tc

Rise Time :

43ns

Continuous Drain Current (ID) :

33A

Turn-Off Delay Time :

161 ns

Weight :

1.946308g

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Published :

2015

Number of Elements :

1

Drain-source On Resistance-Max :

0.098Ohm

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

33A Tc

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600V

Element Configuration :

Single

Number of Terminations :

2

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

48 ns

Turn On Delay Time :

28 ns

Packaging :

Bulk

Height :

4.83mm

Mounting Type :

Surface Mount