SIHB33N60E-GE3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

80 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Rise Time :

90ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

88A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Weight :

1.437803g

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Power Dissipation-Max :

278W Tc

Published :

2013

Rds On (Max) @ Id, Vgs :

99m Ω @ 16.5A, 10V

Threshold Voltage :

2V

Number of Terminations :

2

Turn On Delay Time :

56 ns

Number of Pins :

3

Number of Elements :

1

Lead Free :

Lead Free

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.099Ohm

REACH SVHC :

Unknown

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Element Configuration :

Single

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Packaging :

Bulk

Turn-Off Delay Time :

150 ns

Number of Channels :

1

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

33A

Input Capacitance (Ciss) (Max) @ Vds :

3508pF @ 100V