SIHB30N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

18 Weeks

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

Power Dissipation-Max :

250W Tc

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

2V

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

63 ns

Rise Time :

32ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Number of Elements :

1

Weight :

1.437803g

Resistance :

125mOhm

Continuous Drain Current (ID) :

29A

Pulsed Drain Current-Max (IDM) :

65A

Radiation Hardening :

No

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Height :

4.83mm

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 100V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Length :

10.67mm

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

125m Ω @ 15A, 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65mm

Number of Pins :

3

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

19 ns

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs (Max) :

±30V

JESD-609 Code :

e3

Power Dissipation :

250W

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

690 mJ

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

36 ns