SIHB30N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Radiation Hardening :

No

Continuous Drain Current (ID) :

29A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

65A

Vgs (Max) :

±30V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Number of Channels :

1

Power Dissipation :

250W

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

125m Ω @ 15A, 10V

Power Dissipation-Max :

250W Tc

Number of Terminations :

2

Turn On Delay Time :

19 ns

Turn-Off Delay Time :

63 ns

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Terminal Form :

Gull wing

Rise Time :

32ns

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Avalanche Energy Rating (Eas) :

690 mJ

Weight :

1.437803g

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

600V

Fall Time (Typ) :

36 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 100V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED

Published :

2016

Number of Pins :

3

Number of Elements :

1