SIHB28N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.67mm

Packaging :

Tube

Mounting Type :

Surface Mount

FET Type :

N-Channel

Weight :

1.946308g

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

600V

Height :

4.83mm

Continuous Drain Current (ID) :

28A

Turn On Delay Time :

24 ns

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Width :

9.65mm

Power Dissipation-Max :

250W Tc

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

600V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Number of Terminations :

2

Published :

2015

Number of Channels :

1

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

75A

Rds On (Max) @ Id, Vgs :

123m Ω @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2714pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

82 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Rise Time :

40ns

Fall Time (Typ) :

39 ns

Factory Lead Time :

21 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA