SIHB25N50E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

145m Ω @ 12A, 10V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

500V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

50A

Input Capacitance (Ciss) (Max) @ Vds :

1980pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Published :

2017

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.145Ohm

Drain Current-Max (Abs) (ID) :

26A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Surface Mount :

yes

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

500V

Factory Lead Time :

18 Weeks

Avalanche Energy Rating (Eas) :

273 mJ

Power Dissipation-Max :

250W Tc

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE