SIHB24N65ET1-GE3

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Mfr.Part #
SIHB24N65ET1-GE3
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 650V 24A TO263
Stock
33,614
In Stock :
33,614

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
250W Tc
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
2740pF @ 100V
Drain to Source Voltage (Vdss) :
650V
Vgs (Max) :
±30V
Factory Lead Time :
14 Weeks
Published :
2018
RoHS Status :
Non-RoHS Compliant
Series :
E
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
145m Ω @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs :
122nC @ 10V
Datasheets
SIHB24N65ET1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHB24N65ET1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, SIHB24N65ET1-GE3 pinout, SIHB24N65ET1-GE3 datasheet PDF, SIHB24N65ET1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHB24N65ET1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHB24N65ET1-GE3


N-Channel Tape & Reel (TR) 145m Ω @ 12A, 10V ±30V 2740pF @ 100V 122nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SIHB24N65ET1-GE3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2740pF @ 100V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

SIHB24N65ET1-GE3 Features


a 650V drain to source voltage (Vdss)


SIHB24N65ET1-GE3 Applications


There are a lot of Vishay Siliconix
SIHB24N65ET1-GE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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