SIHB24N65EFT1-GE3

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Mfr.Part #
SIHB24N65EFT1-GE3
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
N-CHANNEL 650V
Stock
2,744
In Stock :
2,744

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
E
FET Feature :
-
Package :
Digi-Reel?
Manufacturer :
Vishay
Drive Voltage (Max Rds On, Min Rds On) :
10V
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
650 V
Maximum Operating Temperature :
+ 150 C
Gate Charge (Qg) (Max) @ Vgs :
122 nC @ 10 V
Vgs (Max) :
±30V
Product Status :
Active
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Mounting Type :
Surface Mount
RoHS :
Details
Operating Temperature :
-55°C ~ 150°C (TJ)
Channel Mode :
Enhancement
Supplier Device Package :
TO-263 (D2Pak)
Product Type :
MOSFET
Packaging :
MouseReel
Mounting Style :
SMD/SMT
Rds On (Max) @ Id, Vgs :
156mOhm @ 12A, 10V
FET Type :
N-Channel
Power Dissipation (Max) :
250W (Tc)
Current - Continuous Drain (Id) @ 25°C :
24A (Tc)
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
2774 pF @ 100 V
Subcategory :
MOSFETs
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Brand :
Vishay / Siliconix
Datasheets
SIHB24N65EFT1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHB24N65EFT1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, SIHB24N65EFT1-GE3 pinout, SIHB24N65EFT1-GE3 datasheet PDF, SIHB24N65EFT1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHB24N65EFT1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHB24N65EFT1-GE3


N-Channel MouseReel 156mOhm @ 12A, 10V ±30V 2774 pF @ 100 V 122 nC @ 10 V 650 V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SIHB24N65EFT1-GE3 Overview


A device's maximum input capacitance is 2774 pF @ 100 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650 V drain to source voltage (Vdss).

SIHB24N65EFT1-GE3 Features


a 650 V drain to source voltage (Vdss)


SIHB24N65EFT1-GE3 Applications


There are a lot of Vishay Siliconix
SIHB24N65EFT1-GE3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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