SIHB24N65EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

24A

Vgs (Max) :

±30V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Rds On (Max) @ Id, Vgs :

156m Ω @ 12A, 10V

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

691 mJ

Packaging :

Tube

Number of Elements :

1

Drain-source On Resistance-Max :

0.156Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

650V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

650V

Pulsed Drain Current-Max (IDM) :

65A

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Series :

E

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2774pF @ 100V

Power Dissipation-Max :

250W Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Factory Lead Time :

21 Weeks