SIHB24N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Element Configuration :

Single

Max Operating Temperature :

150°C

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2740pF @ 100V

Drain to Source Voltage (Vdss) :

650V

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Number of Elements :

1

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

650V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Min Operating Temperature :

-55°C

Power Dissipation :

250W

Published :

2013

Width :

9.65mm

Radiation Hardening :

No

Rise Time :

84ns

Power Dissipation-Max :

250W Tc

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V

Weight :

1.437803g

Vgs (Max) :

±30V

Rds On Max :

145 mΩ

Fall Time (Typ) :

69 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

2.74nF

Rds On (Max) @ Id, Vgs :

145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

Unknown

Mounting Type :

Surface Mount

Length :

10.67mm

Turn On Delay Time :

24 ns

Packaging :

Tube

Drain to Source Resistance :

145mOhm

Continuous Drain Current (ID) :

24A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Supplier Device Package :

D2PAK

Height :

4.83mm

Turn-Off Delay Time :

70 ns

Resistance :

145mOhm

Number of Channels :

1

Mount :

Surface Mount