SIHB24N65E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

508 mJ

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Length :

10.67mm

Factory Lead Time :

17 Weeks

Threshold Voltage :

2V

Drain to Source Voltage (Vdss) :

650V

Height :

4.83mm

Continuous Drain Current (ID) :

24A

Terminal Form :

Gull wing

Turn-Off Delay Time :

70 ns

REACH SVHC :

Unknown

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

84ns

Turn On Delay Time :

24 ns

Published :

2013

DS Breakdown Voltage-Min :

650V

Packaging :

Tube

Fall Time (Typ) :

69 ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Number of Terminations :

2

Weight :

1.437803g

Power Dissipation-Max :

250W Tc

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

70A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

2740pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

145m Ω @ 12A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

3

Radiation Hardening :

No

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation :

250W

Number of Channels :

1

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Width :

9.65mm