SIHB22N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

227W

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

56A

Factory Lead Time :

18 Weeks

Number of Elements :

1

Power Dissipation-Max :

227W Tc

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Mount :

Surface Mount

FET Type :

N-Channel

Number of Terminations :

2

Rise Time :

33ns

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Transistor Element Material :

SILICON

Element Configuration :

Single

Continuous Drain Current (ID) :

22A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

4V

Input Capacitance (Ciss) (Max) @ Vds :

2415pF @ 100V

Fall Time (Typ) :

38 ns

Vgs (Max) :

±30V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Drain to Source Breakdown Voltage :

650V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Turn-Off Delay Time :

73 ns

Transistor Application :

SWITCHING