SIHB22N60S-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

65A

Pin Count :

4

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Avalanche Energy Rating (Eas) :

690 mJ

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

250W Tc

Rds On (Max) @ Id, Vgs :

190m Ω @ 11A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

22A

Series :

S

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.19Ohm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2.81nF @ 25V