SIHB22N60S-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Packaging :

Tube

Power Dissipation :

250W

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

600V

Fall Time (Typ) :

59 ns

Number of Pins :

3

Power Dissipation-Max :

250W Tc

Pin Count :

4

Rds On (Max) @ Id, Vgs :

190m Ω @ 11A, 10V

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Resistance :

190mOhm

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Rise Time :

68ns

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Terminations :

2

Number of Elements :

1

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

22A

Radiation Hardening :

No

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

690 mJ

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Published :

2013

Case Connection :

DRAIN

REACH SVHC :

Unknown

Mounting Type :

Surface Mount

Turn-Off Delay Time :

77 ns

Pulsed Drain Current-Max (IDM) :

65A

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Turn On Delay Time :

24 ns

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

2810pF @ 25V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Threshold Voltage :

2V