SIHB22N60EL-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2017

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 100V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

197m Ω @ 11A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max :

227W Tc

Vgs (Max) :

±30V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

21A

Number of Terminations :

2

Number of Elements :

1

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.197Ohm

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

286 mJ

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Pulsed Drain Current-Max (IDM) :

45A

Terminal Form :

Gull wing

Surface Mount :

yes