SIHB22N60EF-GE3
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- Mfr.Part #
- SIHB22N60EF-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 19A D2PAK
- Stock
- 25,204
- In Stock ：
- 25,204
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- D2PAK (TO-263)
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 182mOhm @ 11A, 10V
- Series :
- EF
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1423pF @ 100V
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 14 Weeks
- Power Dissipation-Max :
- 179W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±30V
- Datasheets
- SIHB22N60EF-GE3
N-Channel 182mOhm @ 11A, 10V ±30V 1423pF @ 100V 96nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHB22N60EF-GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1423pF @ 100V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SIHB22N60EF-GE3 Features
a 600V drain to source voltage (Vdss)
SIHB22N60EF-GE3 Applications
There are a lot of Vishay Siliconix
SIHB22N60EF-GE3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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