SIHB22N60E-GE3
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- Mfr.Part #
- SIHB22N60E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 21A D2PAK
- Stock
- 20,620
- In Stock ：
- 20,620
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 21A
- Published :
- 2013
- Input Capacitance :
- 1.92nF
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Length :
- 10.67mm
- Mount :
- Surface Mount
- Height :
- 4.83mm
- Threshold Voltage :
- 2V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1920pF @ 100V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 227W
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Factory Lead Time :
- 14 Weeks
- Rise Time :
- 68ns
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 54 ns
- Drain to Source Resistance :
- 180mOhm
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Resistance :
- 180mOhm
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation-Max :
- 227W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Turn-Off Delay Time :
- 59 ns
- Weight :
- 1.437803g
- Number of Pins :
- 3
- Supplier Device Package :
- D2PAK
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Channels :
- 1
- Turn On Delay Time :
- 18 ns
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 11A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- REACH SVHC :
- Unknown
- Radiation Hardening :
- No
- Rds On Max :
- 180 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Width :
- 9.65mm
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SIHB22N60E-GE3
N-Channel Tube 180mOhm @ 11A, 10V ±30V 1920pF @ 100V 86nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHB22N60E-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1920pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 21A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 59 ns.This device has a drain-to-source resistance of 180mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
SIHB22N60E-GE3 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 59 ns
single MOSFETs transistor is 180mOhm
a threshold voltage of 2V
a 600V drain to source voltage (Vdss)
SIHB22N60E-GE3 Applications
There are a lot of Vishay Siliconix
SIHB22N60E-GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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