SIHB22N60AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

204 mJ

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

20A

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Series :

E

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Number of Elements :

1

Drain to Source Voltage (Vdss) :

600V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

DS Breakdown Voltage-Min :

600V

Factory Lead Time :

14 Weeks

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1451pF @ 100V

Drain-source On Resistance-Max :

0.18ohm

Surface Mount :

yes

Power Dissipation-Max :

179W Tc

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

49A