SIHB21N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification :

-

Continuous Drain Current Id :

17.4

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

1388 pF @ 100 V

Package Type :

D2PAK (TO-263)

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

235mOhm @ 11A, 10V

Gate Charge (Qg) (Max) @ Vgs :

72 nC @ 10 V

Base Product Number :

SIHB21

Pin Count :

3

Configuration :

Single

Supplier Device Package :

D2PAK (TO-263)

Rise Time :

38 ns

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Product Category :

MOSFET

RoHS :

Details

Subcategory :

MOSFETs

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

800 V

Product Status :

Active

Maximum Operating Temperature :

+ 155 C

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Type :

1 N-Channel

Current - Continuous Drain (Id) @ 25°C :

17.4A (Tc)

Transistor Polarity :

N-Channel

Mounting Style :

SMD/SMT

Brand :

Vishay / Siliconix

FET Feature :

-

Number of Elements per Chip :

1

Power Dissipation :

179

Mounting Type :

Surface Mount

MSL :

MSL 1 - Unlimited

Vgs (Max) :

±30V

Power Dissipation (Max) :

32W (Tc)

Packaging :

Tube

Package :

Tube

Channel Type :

N

Manufacturer :

Vishay

Series :

E

Operating Temperature :

-55°C ~ 150°C (TJ)