SIHB20N50E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

42A

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Turn On Delay Time :

17 ns

Continuous Drain Current (ID) :

19A

Rise Time :

27ns

Number of Elements :

1

Power Dissipation-Max :

179W Tc

Fall Time (Typ) :

25 ns

Threshold Voltage :

4V

Drain to Source Breakdown Voltage :

500V

Packaging :

Bulk

Vgs (Max) :

±30V

Factory Lead Time :

18 Weeks

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Turn-Off Delay Time :

48 ns

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 100V

Avalanche Energy Rating (Eas) :

204 mJ

FET Type :

N-Channel

Mounting Type :

Surface Mount

Published :

2016

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

184m Ω @ 10A, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ