SIHB18N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2017

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Surface Mount :

yes

Power Dissipation-Max :

179W Tc

Factory Lead Time :

14 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

202m Ω @ 9A, 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

45A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Terminal Position :

Single

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 100V

Avalanche Energy Rating (Eas) :

204 mJ

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

18A

Drain-source On Resistance-Max :

0.202Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA