SIHB180N60E-GE3
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- Mfr.Part #
- SIHB180N60E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 19A D2PAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 9.5A, 10V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 18 Weeks
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Packaging :
- Bulk
- Power Dissipation-Max :
- 156W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1085pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Supplier Device Package :
- D2PAK (TO-263)
- Series :
- E
- Datasheets
- SIHB180N60E-GE3
N-Channel Bulk 180mOhm @ 9.5A, 10V ±30V 1085pF @ 100V 33nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHB180N60E-GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1085pF @ 100V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
SIHB180N60E-GE3 Features
a 600V drain to source voltage (Vdss)
SIHB180N60E-GE3 Applications
There are a lot of Vishay Siliconix
SIHB180N60E-GE3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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