SIHB17N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Channel Type :

N

Packaging :

Tube

Package :

Tube

Drive Voltage (Max Rds On, Min Rds On) :

10V

Product Type :

MOSFET

Power Dissipation (Max) :

179W (Tc)

Configuration :

Single

RoHS :

Details

Base Product Number :

SIHB17

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C ~ 150°C (TJ)

MSL :

MSL 1 - Unlimited

Current - Continuous Drain (Id) @ 25°C :

15A (Tc)

Mounting Style :

SMD/SMT

Rise Time :

23 ns

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1260 pF @ 100 V

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Number of Elements per Chip :

1

Rds On (Max) @ Id, Vgs :

290mOhm @ 8.5A, 10V

Subcategory :

MOSFETs

Product Status :

Active

Power Dissipation :

179

Brand :

Vishay / Siliconix

Mounting Type :

Surface Mount

Qualification :

-

Number of Channels :

1 Channel

FET Type :

N-Channel

Manufacturer :

Vishay

Series :

E

Continuous Drain Current Id :

15

Gate Charge (Qg) (Max) @ Vgs :

62 nC @ 10 V

Drain to Source Voltage (Vdss) :

800 V

FET Feature :

-

Supplier Device Package :

D2PAK (TO-263)

Package Type :

D2PAK (TO-263)

Vgs (Max) :

±30V

Maximum Operating Temperature :

+ 155 C

Transistor Type :

1 N-Channel