SIHB15N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1093 pF @ 100 V

Base Product Number :

SIHB15

Series :

E

Product Status :

Active

Continuous Drain Current Id :

13A

Current - Continuous Drain (Id) @ 25°C :

13A (Tc)

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

156W

Transistor Type :

1 N - Channel

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

800 V

Product Category :

MOSFET

MSL :

MSL 1 - Unlimited

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

350mOhm @ 7.5A, 10V

Mounting Type :

Surface Mount

Subcategory :

MOSFETs

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

22 ns

Product Type :

MOSFET

Number of Channels :

1 Channel

Supplier Device Package :

D2PAK (TO-263)

Pin Count :

3

Package Type :

D2PAK (TO-263)

FET Type :

N-Channel

Brand :

Vishay / Siliconix

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

53 nC @ 10 V

Channel Mode :

Enhancement

RoHS :

Details

Mounting Style :

SMD/SMT

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Elements per Chip :

1

Package :

Tube

Power Dissipation (Max) :

156W (Tc)

Vgs (Max) :

±30V

Channel Type :

N

Packaging :

Tube

Manufacturer :

Vishay

Qualification :

-