SIHB15N50E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

156W Tc

Current - Continuous Drain (Id) @ 25°C :

14.5A Tc

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

28A

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1162pF @ 100V

Mounting Type :

Surface Mount

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2015

Rds On (Max) @ Id, Vgs :

280m Ω @ 7.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Packaging :

Bulk

Number of Elements :

1

Factory Lead Time :

18 Weeks

Continuous Drain Current (ID) :

14.5A

Drain-source On Resistance-Max :

0.28Ohm

Threshold Voltage :

4V

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA