SIHB12N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Power Dissipation :

156W

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

650V

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

18 Weeks

Drain to Source Breakdown Voltage :

700V

Turn On Delay Time :

16 ns

Avalanche Energy Rating (Eas) :

226 mJ

Pulsed Drain Current-Max (IDM) :

28A

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

18 ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Turn-Off Delay Time :

35 ns

Weight :

1.437803g

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2009

Radiation Hardening :

No

Continuous Drain Current (ID) :

12A

Mount :

Surface Mount

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Rise Time :

19ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1224pF @ 100V

Number of Terminations :

2

Terminal Form :

Gull wing

Power Dissipation-Max :

156W Tc