SI7964DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

8

Continuous Drain Current (ID) :

6.1A

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

FET Feature :

Standard

Number of Terminations :

6

Package / Case :

PowerPAK® SO-8 Dual

Turn On Delay Time :

20 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

C BEND

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Max Power Dissipation :

1.4W

Base Part Number :

SI7964

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

50 ns

Drain to Source Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Fall Time (Typ) :

15 ns

Mounting Type :

Surface Mount

Series :

TrenchFET®

Published :

2016

RoHS Status :

ROHS3 Compliant

Rise Time :

15ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-XDSO-C6

Power Dissipation :

1.4W

Number of Pins :

8

Number of Elements :

2

Element Configuration :

Dual

Avalanche Energy Rating (Eas) :

31 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Terminal Finish :

PURE MATTE TIN

Case Connection :

DRAIN

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

40A

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.023Ohm

Rds On (Max) @ Id, Vgs :

23m Ω @ 9.6A, 10V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

Radiation Hardening :

No