SI4886DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Continuous Drain Current (ID) :

13A

ECCN Code :

EAR99

Width :

4mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

9.5A

Turn-Off Delay Time :

42 ns

Terminal Position :

Dual

Number of Terminations :

8

REACH SVHC :

Unknown

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.56W

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Length :

5mm

Published :

2013

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Weight :

506.605978mg

Height :

1.55mm

FET Type :

N-Channel

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

10m Ω @ 13A, 10V

Rise Time :

5ns

Fall Time (Typ) :

5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pin Count :

8

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Nominal Vgs :

800 mV

Mount :

Surface Mount

Turn On Delay Time :

14 ns

Power Dissipation-Max :

1.56W Ta