SI1553DL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

SI1553

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Pin Count :

6

Drain-source On Resistance-Max :

0.385Ohm

FET Type :

N and P-Channel

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

270mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Gate to Source Voltage (Vgs) :

12V

Published :

2010

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

JESD-609 Code :

e3

Series :

TrenchFET®

Terminal Finish :

PURE MATTE TIN

Threshold Voltage :

600mV

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

Element Configuration :

Dual

ECCN Code :

EAR99

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

385m Ω @ 660mA, 4.5V

Number of Terminations :

6

Radiation Hardening :

No

Number of Pins :

6

Power Dissipation :

270mW

Continuous Drain Current (ID) :

410mA

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

660mA 410mA

Number of Elements :

2

Mount :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC