SI1539DDL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

30V

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

388m Ω @ 600mA, 10V, 1.07 Ω @ 400mA, 10V

JESD-30 Code :

R-PDSO-G6

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

Input Capacitance (Ciss) (Max) @ Vds :

28pF @ 15V 21pF @ 15V

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.5V @ 250μA, 3V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Series :

TrenchFET®

Power - Max :

340mW

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.388Ohm

Gate Charge (Qg) (Max) @ Vgs :

1.1nC @ 4.5V, 1.2nC @ 4.5V

Feedback Cap-Max (Crss) :

888 pF

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

700mA Tc 460mA Tc

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.7A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

6-TSSOP, SC-88, SOT-363

FET Type :

N and P-Channel

ECCN Code :

EAR99

Transistor Element Material :

SILICON