SI1563DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

450mV

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

1.13A 880mA

Transistor Element Material :

SILICON

Terminal Position :

Dual

Rise Time :

25ns

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

PURE MATTE TIN

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 4.5V

Mount :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.13A, 4.5V

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Max Power Dissipation :

570mW

Fall Time (Typ) :

25 ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 100µA

Base Part Number :

SI1563

Resistance :

490mOhm

Published :

2014

Pin Count :

6

Continuous Drain Current (ID) :

1.13A

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Termination :

SMD/SMT

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

1 V

Gate to Source Voltage (Vgs) :

8V

FET Type :

N and P-Channel

Power Dissipation :

740mW

Terminal Form :

Gull wing

Turn-Off Delay Time :

15 ns

Dual Supply Voltage :

20V

Lead Free :

Lead Free

Number of Elements :

2

Radiation Hardening :

No

Pbfree Code :

yes