SI1553CDL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

700mA 500mA

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.39Ohm

Number of Terminations :

6

Power Dissipation-Max (Abs) :

0.34W

Published :

2016

Number of Elements :

2

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation Ambient-Max :

0.29W

JESD-30 Code :

R-PDSO-G6

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Power - Max :

340mW

Surface Mount :

yes

Pin Count :

6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N and P-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

390m Ω @ 700mA, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

38pF @ 10V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

0.7A

ECCN Code :

EAR99

Terminal Position :

Dual

DS Breakdown Voltage-Min :

20V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE