SI1539DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Power Dissipation :

270mW

Number of Terminations :

6

Weight :

7.512624mg

Base Part Number :

SI1539

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Published :

2014

JESD-609 Code :

e3

Number of Pins :

6

Length :

2mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.25mm

Terminal Position :

Dual

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

0.54A

Current - Continuous Drain (Id) @ 25°C :

540mA 420mA

Radiation Hardening :

No

Resistance :

940mOhm

Number of Channels :

2

Continuous Drain Current (ID) :

630mA

Pbfree Code :

yes

Nominal Vgs :

1 V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Rise Time :

8ns

Terminal Finish :

PURE MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Package / Case :

6-TSSOP, SC-88, SOT-363

Fall Time (Typ) :

8 ns

Height :

1mm

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Turn On Delay Time :

4 ns

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

480m Ω @ 590mA, 10V

Pin Count :

6

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Turn-Off Delay Time :

5 ns

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

270mW

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2.6V