SI1551DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

290mA 410mA

Rise Time :

20ns

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.1844mm

Element Configuration :

Single

Published :

2007

Lead Free :

Lead Free

Termination :

SMD/SMT

Threshold Voltage :

1.5V

Number of Terminations :

6

Base Part Number :

SI1551

Pbfree Code :

yes

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Elements :

2

Height :

990.6μm

Terminal Finish :

MATTE TIN

Pin Count :

6

Drain to Source Breakdown Voltage :

20V

Resistance :

1.9Ohm

Number of Pins :

6

Fall Time (Typ) :

20 ns

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 290mA, 4.5V

Dual Supply Voltage :

20V

Max Power Dissipation :

270mW

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

300mA

Drain Current-Max (Abs) (ID) :

0.41A

JESD-609 Code :

e3

Turn On Delay Time :

23 ns

Power Dissipation :

270mW

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Radiation Hardening :

No

Nominal Vgs :

1.5 V

Turn-Off Delay Time :

8.5 ns

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

FET Type :

N and P-Channel

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Width :

1.3462mm

Terminal Position :

Dual