R6509KND3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current Id :

9A

Drain to Source Voltage (Vdss) :

650 V

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Subcategory :

MOSFETs

RoHS :

Details

Pin Count :

3

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Manufacturer :

Rohm Semiconductor

Packaging :

Cut Tape

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 230μA

Vgs (Max) :

±20V

Number of Elements per Chip :

1

Channel Mode :

Enhancement

FET Type :

N-Channel

Power Dissipation (Max) :

94W (Tc)

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

540 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

FET Feature :

-

Brand :

Rohm Semiconductor

Power Dissipation :

94W

Rise Time :

20 ns

Supplier Device Package :

TO-252

Package Type :

DPAK (TO-252)

Product Type :

MOSFET

Mounting Type :

Surface Mount

Channel Type :

N Channel

Gate Charge (Qg) (Max) @ Vgs :

16.5 nC @ 10 V

Operating Temperature :

150°C (TJ)

Transistor Type :

1 N-Channel

Qualification :

-

Configuration :

Single

Rds On (Max) @ Id, Vgs :

585mOhm @ 2.8A, 10V

Transistor Polarity :

N-Channel